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Bipolar (BJT) Transistor PNP 140 V 16 A 150 W Through Hole TO-204 (TO-3)
TO-204-2Manufacturer:
onsemi
Mfr.Part #:
2N6609
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
PNP
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
140 V
EDA/CAD Models:
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Bipolar (BJT) Transistor PNP 140 V 16 A 150 W Through Hole TO-204 (TO-3)
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 140 V | Collector- Base Voltage VCBO | 160 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.4 V |
Maximum DC Collector Current | 16 A | Pd - Power Dissipation | 150 W |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Continuous Collector Current | 16 A | DC Collector/Base Gain hfe Min | 15 |
Height | 8.51 mm | Length | 39.37 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 100 |
Subcategory | Transistors | Technology | Si |
Width | 26.67 mm | Unit Weight | 0.056438 oz |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $11.010 | $11.01 |
200+ | $4.394 | $878.80 |
500+ | $4.247 | $2,123.50 |
1000+ | $4.174 | $4,174.00 |
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