This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

2N6660 +BOM

60V, 3 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET.

Manufacturer:

Solid State Inc.
Mfr.Part #:

2N6660
Datasheet:

2N6660 Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.39.00.01
EDA/CAD Models:

Request Free CAD Models for 2N6660

2N6660 General Description

The 2N6660 is a cutting-edge enhancement-mode transistor that capitalizes on vertical DMOS technology and a time-tested silicon-gate manufacturing process. This winning combination results in a device that boasts the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. Thanks to its MOS structure, the 2N6660 is immune to thermal runaway and thermally-induced secondary breakdown. This makes it an excellent choice for a wide range of switching and amplifying applications, where low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are crucial. Whether you need a reliable component for your next electronics project or a dependable solution for industrial applications, the 2N6660 is up to the task

Key Features

Excellent surge immunity
High noise rejection ratio
Fast response time
Compact packaging

Specifications

Source Content uid	2N6660	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.39.00.01	Factory Lead Time	4 Weeks
Additional Feature	HIGH INPUT IMPEDANCE	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.41 A	Drain-source On Resistance-Max	3 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	10 pF
JEDEC-95 Code	TO-39	JESD-30 Code	O-MBCY-W3
JESD-609 Code	e4	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	6.25 W
Power Dissipation-Max (Abs)	6.25 W	Pulsed Drain Current-Max (IDM)	3 A
Qualification Status	Not Qualified	Reference Standard	TS 16949
Surface Mount	NO	Terminal Finish	NICKEL GOLD
Terminal Form	WIRE	Terminal Position	BOTTOM
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	10 ns	Turn-on Time-Max (ton)	10 ns