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2N6790 +BOM

N-Channel 200 V 3.5A (Tc) 800mW (Tc) Through Hole TO-39

  • Manufacturer:

    Microsemi Corporation

  • Mfr.Part #:

    2N6790

  • Datasheet:

    2N6790 Datasheet (PDF) pdf-icon

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain To Source Voltage (Vdss):

    200 V

  • Current - Continuous Drain (Id) @ 25°C:

    3.5A (Tc)

  • EDA/CAD Models:

    eda-cad.png Request Free CAD Models for 2N6790

2N6790 General Description

N-Channel 200 V 3.5A (Tc) 800mW (Tc) Through Hole TO-39

Key Features

  • 3.5A, 200V
  • rDS(ON) = 0.800Ω
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Majority Carrier Device
  • Related Literature
  • - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds -
FET Feature - Power Dissipation (Max) 800mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Product Category MOSFET Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 800 mW Configuration Single
Product Type MOSFET Factory Pack Quantity 100
Subcategory MOSFETs Transistor Type 1 N-Channel
Unit Weight 0.229281 oz

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