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2N6849 TO-205AF

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2N6849 +BOM

High-voltage, high-speed single MOSFET suitable for demanding power management system

Manufacturer:

Infineon
Mfr.Part #:

2N6849
Datasheet:

2N6849 Datasheet (PDF)
Configuration:

Discrete
ID Max:

-6.5 A
Polarity:

P
Qualification:

DLA
EDA/CAD Models:

Request Free CAD Models for 2N6849

2N6849 General Description

Ideal for applications requiring a p-channel transistor, the 2N6849 offers a maximum drain-source voltage of 100V and a continuous drain current of 6.5A. With an on-resistance of 0.3ohm and a threshold voltage of 4V, this through-hole mounted device provides reliable and efficient operation. It is important to note that the transistor is not RoHS compliant

Specifications

Configuration	Discrete	ID max	-6.5 A
Polarity	P	Qualification	DLA
VBRDSS min	-100.0 V	QPL Part Number	2N6849
RDS (on) max	300.0 mΩ	Language	SPICE
Product Category	High reliability power MOSFETs

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