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See Technical Specifications

2N7000 +BOM

Vertical DMOS FET with exceptional voltage handling capabilitie

Manufacturer:

Microchip
Mfr.Part #:

2N7000
Datasheet:

2N7000 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7000

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

2N7000 General Description

The 2N7000 transistor is a top-of-the-line enhancement-mode device that boasts a vertical DMOS structure and state-of-the-art silicon-gate manufacturing process. This innovation allows the transistor to have the power capabilities of traditional bipolar transistors, while also maintaining the high input impedance and positive temperature coefficient typically found in MOS devices. With all the advantages that come with MOS structures, such as thermal stability and resistance to secondary breakdown, the 2N7000 is a reliable and efficient choice for a wide range of applications

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Application

LED Backlight Control
Voltage Regulator
Temperature Sensor Signal

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	200 mA	Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Configuration	Single
Height	5.33 mm	Length	5.21 mm
Product Type	MOSFET	Factory Pack Quantity	500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Width	4.19 mm
Unit Weight	0.016000 oz