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See Technical Specifications

2N7002L +BOM

N-channel power MOSFET for reliable DC/DC conversi

Manufacturer:

onsemi
Mfr.Part #:

2N7002L
Datasheet:

2N7002L Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

115mA (Ta)
EDA/CAD Models:

Request Free CAD Models for 2N7002L

Email: [email protected]

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Tel: +852 95804164

2N7002L General Description

Utilizing a high cell density design, the 2N7002L is a standout product in the realm of field effect transistors. By incorporating innovative trench MOSFET technology, this component delivers superior performance with reduced on-state resistance. Its robust construction ensures reliability and durability, while its rapid switching speed caters to a wide range of applications. From small servo motor control to power management and switching tasks, the 2N7002L excels in low-voltage, low-current settings

Key Features

RoHS Compliant

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	200mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount