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See Technical Specifications

2N7002 +BOM

N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer:

Microchip
Mfr.Part #:

2N7002
Datasheet:

2N7002 Datasheet (PDF)
IDpuls Max:

1.2 A
RthJA Max:

250.0 K/W
Ptot Max:

0.5 W
VDS Max:

60.0 V
EDA/CAD Models:

Request Free CAD Models for 2N7002

Email: [email protected]

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Tel: +852 95804164

2N7002 General Description

Comprising a vertical DMOS structure, the 2N7002 transistor epitomizes innovation in semiconductor technology. Through its advanced silicon-gate manufacturing process, this enhancement-mode transistor offers unparalleled power handling capabilities comparable to bipolar transistors. Its high input impedance and positive temperature coefficient make it an ideal option for precision circuit designs. With a proven track record of reliability and robustness, the 2N7002 transistor is well-suited for a multitude of applications requiring low threshold voltage, high breakdown voltage, and fast switching speeds

Key Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Application

This product is general usage and suitable for many different applications.
Small Servo Motor Control
Power MOSFET Gate Drivers

Specifications

IDpuls max	1.2 A	RthJA max	250.0 K/W
Ptot max	0.5 W	VDS max	60.0 V
ID max	0.3 A	Special Features	Small Signal
RDS (on) max	3000.0 mΩ	Polarity	N
VGS(th) max	2.5 V	VGS(th) min	1.5 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C