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2N7000-D75Z +BOM

N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω

Manufacturer:

onsemi
Mfr.Part #:

2N7000-D75Z
Datasheet:

2N7000-D75Z Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2N7000-D75Z

2N7000-D75Z General Description

With a focus on minimizing on-state resistance and maximizing reliability, the 2N7000-D75Z N-channel Small Signal MOSFET from ON Semiconductor is a standout option for engineers seeking high-performance components. Ideal for applications requiring up to 400 mA DC and capable of delivering pulsed currents up to 2 A, these MOSFETs excel in low-voltage, low-current scenarios. Designed with ON Semiconductor's proprietary DMOS technology, the 2N7000-D75Z offers rugged construction and fast switching performance, making it a dependable choice for demanding projects

Key Features

Low Input Current Consumption
High Sensitivity Detection Capability
Minimum False Trigger Rate
Maximum Output Current Delivery
Fast Recovery Time Performance
Rugged and Reliable Operating Conditions

Application

Audio amplifier circuits
Universal voltage regulators

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	200 mA	Rds On - Drain-Source Resistance	1.2 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	400 mW
Channel Mode	Enhancement	Series	2N7000
Configuration	Single	Forward Transconductance - Min	0.1 S
Height	5.33 mm	Length	5.2 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.19 mm
Part # Aliases	2N7000_D75Z	Unit Weight	0.007090 oz