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See Technical Specifications

2N7002 TR +BOM

MOSFET N-Type with a maximum voltage of 60V and a current rating of 0.2A

Manufacturer:

Central Semiconductor Corp
Mfr.Part #:

2N7002 TR
Datasheet:

2N7002 TR Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

115mA (Tc)
EDA/CAD Models:

Request Free CAD Models for 2N7002 TR

2N7002 TR General Description

With its impressive specifications and reliable performance, the 2N7002 TR is a versatile and valuable addition to any electronic design. Whether it's for switching or amplifying applications, this MOSFET transistor delivers the performance and efficiency needed to meet the demands of modern electronics. Its compact form factor, wide operating temperature range, and high-frequency capabilities make it an excellent choice for a wide range of applications where reliable and efficient power management is essential

Key Features

Low On-Resistance: 2.5 Ω
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	Vgs (Max)	40V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V	Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	2N7002