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2N7002KQ-7 +BOM

N-channel MOSFET with a maximum voltage rating of 60V and a current rating of 0.38A, operating up to 150°C, compliant with RoHS regulations

2N7002KQ-7 General Description

N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3

Key Features

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The 2N7002KQ is suitable for automotive applications
  • requiring specific change control; it is AEC-Q101 qualified,
  • PPAP capable, and manufactured in IATF 16949 certified
  • facilities.

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 380 mA Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.6 V
Qg - Gate Charge 300 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 540 mW
Channel Mode Enhancement Fall Time 9.9 ns
Product Type MOSFET Rise Time 3.4 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Typical Turn-Off Delay Time 15.7 ns Typical Turn-On Delay Time 3.9 ns
FET Type N-Channel Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.3 nC @ 4.5 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V Power Dissipation (Max) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Base Product Number 2N7002

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