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2N7002KT7G +BOM

This product, labeled as 2N7002KT7G, is a N-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for switching applications

Manufacturer:

onsemi
Mfr.Part #:

2N7002KT7G
Datasheet:

2N7002KT7G Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

320mA (Ta)
EDA/CAD Models:

Request Free CAD Models for 2N7002KT7G

2N7002KT7G General Description

The 2N7002KT7G from ON Semiconductor is a powerful N-channel enhancement mode Field-Effect Transistor (FET) designed for use in a wide range of electronic devices. With a maximum drain-source voltage (Vds) of 60V, this FET is capable of handling low power, high speed switching applications with ease. Its maximum drain current (Id) of 300mA makes it suitable for use in many low voltage applications, while its low on-resistance (Rds(on)) of 5 ohms ensures efficient switching and minimal power loss. Housed in a compact SOT-23 package, this FET is perfect for space-constrained applications where board space is limited. Additionally, with a gate threshold voltage (Vgs(th)) of 1 to 2.5V, the 2N7002KT7G can be easily driven by most logic level signals, making it extremely versatile. Furthermore, its fast switching speed and low gate charge make it ideal for high frequency applications, ensuring reliable and efficient performance

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	0.7 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	24.5 pF @ 20 V
Power Dissipation (Max)	300mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	2N7002