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2N7002PW +BOM

Tiny signal FET

2N7002PW General Description

Featuring a low on-state resistance of 1.75 ohms, the 2N7002PW ensures minimal power loss and high efficiency in switching applications. Its low threshold voltage of 2.1V allows for easy integration with low voltage signals. Due to its high performance and small size, this transistor is commonly used in low power switching circuits, load switches, and battery management systems

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
Moisture Sensitivity Level 1 FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 315mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 10 V Power Dissipation (Max) 260mW (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount

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In Stock: 4,340

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Qty. Unit Price Ext. Price
50+ $0.017 $0.85
500+ $0.014 $7.00
3000+ $0.012 $36.00
6000+ $0.011 $66.00
24000+ $0.010 $240.00
51000+ $0.010 $510.00

The prices below are for reference only.