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2N7053 +BOM

Bipolar (BJT) Transistor NPN - Darlington 100 V 1.5 A 200MHz 1 W Through Hole TO-226-3

  • Manufacturer:

    onsemi

  • Mfr.Part #:

    2N7053

  • Datasheet:

    2N7053 Datasheet (PDF) pdf-icon

  • Configuration:

    Single

  • Transistor Polarity:

    NPN

  • Collector- Emitter Voltage VCEO Max:

    100 V

  • Emitter- Base Voltage VEBO:

    12 V

2N7053 General Description

Bipolar (BJT) Transistor NPN - Darlington 100 V 1.5 A 200MHz 1 W Through Hole TO-226-3

Specifications

Product Category Darlington Transistors Configuration Single
Transistor Polarity NPN Collector- Emitter Voltage VCEO Max 100 V
Emitter- Base Voltage VEBO 12 V Collector- Base Voltage VCBO 100 V
Maximum DC Collector Current 1.5 A Maximum Collector Cut-off Current 100 nA
Mounting Style Through Hole Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series 2N7053
DC Collector/Base Gain hfe Min 1000 Height 7.87 mm
Length 4.7 mm Product Type Darlington Transistors
Factory Pack Quantity 1500 Subcategory Transistors
Width 3.93 mm Unit Weight 0.008818 oz

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