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2SC3506 +BOM

Power Bipolar Transistor

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2SC3506 General Description

Bipolar (BJT) Transistor NPN 800 V 3 A 4MHz 3 W Through Hole TOP-3F-A1

2SC3506

Key Features

  • High-speed switching
  • High collector to base voltage VCBO
  • Satisfactory linearity of foward current transfer ratio hFE
  • Full-pack package which can be installed to the heat sink with one screw

Specifications

Packaging Bulk Part Status Obsolete
Transistor Type NPN Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 800 V Vce Saturation (Max) @ Ib, Ic 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max) 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 2A, 5V
Power - Max 3 W Frequency - Transition 4MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Base Product Number 2SC350

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