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2SK1489(Q) +BOM
2SK1489(Q) is a N-Channel MOSFET with a maximum voltage of 1000V and a maximum current of 12A in TO-3PL package
TO-3PL-3-
Manufacturer:
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Mfr.Part #:
2SK1489(Q)
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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Availability: 4426 PCS
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2SK1489(Q) General Description
Operating at a maximum power dissipation of 200W, the 2SK1489(Q) offers high performance in a compact package. With a lead spacing of 5.45mm and a single transistor design, this MOSFET is easy to integrate into your existing circuitry. The TO-3P case style provides robust protection for the internal components, ensuring long-term reliability even in demanding environments. Whether you're building a new electronics project or replacing an old transistor, the 2SK1489(Q) delivers the voltage, current, and power ratings you need for success
Key Features
- Super-fast response time
- Low power consumption and heat
- High reliability and durability
Application
- Compact size, high power
- Efficient signal processing
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1 kV |
Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Series | 2SK1489 |
Configuration | Single | Fall Time | 150 ns |
Height | 26 mm | Length | 20 mm |
Product Type | MOSFET | Rise Time | 100 ns |
Factory Pack Quantity | 25 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 5 mm |
Unit Weight | 0.245577 oz |
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