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2SK2057 +BOM

TRANSISTOR 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power

2SK2057 General Description

TRANSISTOR 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power

Key Features

  • Low Drain-Source ON Resistance
  • - RDS(ON) = 0.24Ω (Typ.)
  • High Forward Transfer Amittnace
  • -|Yfs| = 15S (Typ.)
  • Low Leakage Current
  • - IDSS = -100μA (Max.)(VDS = 500V)
  • Enhancement-Mode
  • - Vth = 2.0 ~ 4.0V (VDS = -10V, ID = 1mA)

Specifications

Source Content uid 2SK2057 Part Life Cycle Code Obsolete
Pin Count 2 Reach Compliance Code
ECCN Code EAR99 HTS Code 8541.29.00.95
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.29 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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