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See Technical Specifications

2SK2231 +BOM

High-performance MOSFET device for efficient power control. (47)

Manufacturer:

Toshiba
Mfr.Part #:

2SK2231
Datasheet:

2SK2231 Datasheet (PDF)
Part Life Cycle Code:

End Of Life
ECCN Code:

EAR99
Date Of Intro:

1994-01-01
Avalanche Energy Rating (Eas):

129 mJ

2SK2231 General Description

When it comes to power Field-Effect Transistors, the 2SK2231 stands out for its superior quality and performance. With a maximum current rating of 5A and a low on-resistance of 0.16ohm, this transistor can handle high-power applications with ease. Its Silicon construction and Metal-oxide Semiconductor technology ensure reliable operation under challenging conditions

Application

SWITCHING

Specifications

Source Content uid	2SK2231	Part Life Cycle Code	End Of Life
Reach Compliance Code		ECCN Code	EAR99
Date Of Intro	1994-01-01	Avalanche Energy Rating (Eas)	129 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	5 A
Drain-source On Resistance-Max	0.16 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e0
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	20 W
Pulsed Drain Current-Max (IDM)	20 A	Surface Mount	YES
Terminal Finish	Tin/Lead (Sn/Pb)	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON