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AFGY100T65SPD +BOM

IGBT - 650 V 100 A FS3 for EV traction inverter application

Manufacturer:

onsemi
Mfr.Part #:

AFGY100T65SPD
Datasheet:

AFGY100T65SPD Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for AFGY100T65SPD

AFGY100T65SPD General Description

AFGY100T65SPD which is AEC Q101 qualified IGBT which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. The part also offers an advantage of outstanding parallel operation performance with balance current sharing.

Key Features

AEC Q101 qualified
Low Vcesat voltage
Tight parameter distribution
Soft recovery diode

Application

HEV/EV traction motors

Specifications

Product Category	IGBT Transistors	REACH	Details
Technology	Si	Mounting Style	Through Hole
Configuration	Single	Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.6 V	Maximum Gate Emitter Voltage	- 20 V, 20 V
Continuous Collector Current at 25 C	120 A	Pd - Power Dissipation	660 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs