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AFGHL50T65SQ +BOM

AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT, Stand alone IGBT without co-packed diode

Manufacturer:

onsemi
Mfr.Part #:

AFGHL50T65SQ
Datasheet:

AFGHL50T65SQ Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for AFGHL50T65SQ

AFGHL50T65SQ General Description

Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application.

Key Features

AEC Q101 qualified
Maximum Junction Temperature, Tj=175°C
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Fast Switching
Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A
100% of the parts are tested for ILM

Application

PFC
Hard Switching
Automotive

Specifications

Product Category	IGBT Transistors	REACH	Details
Technology	Si	Mounting Style	Through Hole
Configuration	Single	Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	1.6 V	Maximum Gate Emitter Voltage	- 20 V, 20 V
Continuous Collector Current at 25 C	80 A	Pd - Power Dissipation	268 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Qualification	AEC-Q101	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs