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AFGHL75T65SQDT +BOM

AEC 101 Qualified, 650V, 75A Fieldstop 4 trench IGBT

Manufacturer:

onsemi
Mfr.Part #:

AFGHL75T65SQDT
Datasheet:

AFGHL75T65SQDT Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

650 V
EDA/CAD Models:

Request Free CAD Models for AFGHL75T65SQDT

AFGHL75T65SQDT General Description

The innovation behind AFGHL75T65SQDT lies in its utilization of novel field stop 4th generation high-speed IGBT technology. This groundbreaking design, combined with AEC Q101 qualification, guarantees exceptional performance in automotive applications. Whether you need hard or soft switching topology, this product is engineered to deliver superior results

Key Features

High-voltage capability
Low quiescent current
Wide operating temperature range

Application

Low Power Consumption
High Efficiency
Multiple Output Configurations

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.6 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	375 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Qualification	AEC-Q101
Continuous Collector Current Ic Max	300 A	Gate-Emitter Leakage Current	400 nA
Product Type	IGBT Transistors	Factory Pack Quantity	30
Subcategory	IGBTs