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AFV10700HSR5 +BOM

RF MOSFET Transistors 700W 1030-1090MHz

  • Manufacturer:

    NXP

  • Mfr.Part #:

    AFV10700HSR5

  • Datasheet:

    AFV10700HSR5 Datasheet (PDF) pdf-icon

  • Transistor Polarity:

    N-Channel

  • Technology:

    Si

  • Id - Continuous Drain Current:

    2.6 A

  • Vds - Drain-Source Breakdown Voltage:

    105 V

AFV10700HSR5 General Description

RF Mosfet 50 V 100 mA 1.03GHz ~ 1.09GHz 19.2dB 770W NI-780S-4L

NXP Inventory
NXP Original Stock
NXP Inventory

Specifications

Product Category RF MOSFET Transistors Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 2.6 A
Vds - Drain-Source Breakdown Voltage 105 V Operating Frequency 1.03 GHz to 1.09 GHz
Gain 19.2 dB Output Power 700 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Number of Channels 2 Channel
Pd - Power Dissipation 526 W Product Type RF MOSFET Transistors
Series AFV10700 Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type LDMOS FET
Type RF Power MOSFET Vgs - Gate-Source Voltage + 10 V
Vgs th - Gate-Source Threshold Voltage 2.3 V Part # Aliases 935346524178
Unit Weight 0.228922 oz

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In Stock: 8,925

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1,148.126 $1,148.13
200+ $444.311 $88,862.20
500+ $428.697 $214,348.50
1000+ $420.980 $420,980.00

The prices below are for reference only.

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