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BC212B +BOM

Bipolar (BJT) Transistor PNP 50 V 100 mA 280MHz 350 mW Through Hole TO-92 (TO-226)

BC212B General Description

Bipolar (BJT) Transistor PNP 50 V 100 mA 280MHz 350 mW Through Hole TO-92 (TO-226)

Key Features

  • Pb-Free Packages are Available

Application

  • ESD Protection
  • Polarity Reversal Protection
  • Data Line Protection
  • Inductive Load Protection
  • Steering Logic

Specifications

Source Content uid BC212B Pbfree Code No
Part Life Cycle Code Obsolete Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 50 V
Configuration SINGLE DC Current Gain-Min (hFE) 60
JEDEC-95 Code TO-226AA JESD-30 Code O-PBCY-T3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form THROUGH-HOLE
Terminal Position BOTTOM Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 280 MHz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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