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BC847BPDW1T1G +BOM

100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BC847BPDW1T1G
Datasheet:

BC847BPDW1T1G Datasheet (PDF)
Case Outline:

419B-02
MSL Temp (°C):

260
Container Type:

REEL
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for BC847BPDW1T1G

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BC847BPDW1T1G General Description

The BC847BPDW1T1G is a versatile component that is suitable for a wide range of amplifier applications. With a maximum current rating of 100 mA and a voltage rating of 45 V, this co-packaged NPN and PNP Bipolar Junction Transistor offers flexibility and reliability in various circuit designs. Its compact SOT-363/SC-88 package makes it ideal for space-constrained applications, providing a convenient solution for low power surface mount requirements

Key Features

Series S Prefix for High Reliability Requirements
Automotive Grade Components with AEC-Q100 Qualification
Rohs Compliant and PPAP Capable for Automotive Use
Automotive and Aerospace Qualified per AS9100C

Specifications

Status	Active	Case Outline	419B-02
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN, PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	45 V	Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	600 mV, 650 mV
Maximum DC Collector Current	100 mA	Pd - Power Dissipation	380 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	BC847BP
Continuous Collector Current	100 mA	DC Collector/Base Gain hfe Min	150
Height	0.9 mm	Length	2 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.25 mm	Unit Weight	0.000988 oz