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See Technical Specifications

BC856ALT1G +BOM

Operating as a PNP transistor, BC856ALT1G is suitable for a variety of electronic circuits

Manufacturer:

Onsemi
Mfr.Part #:

BC856ALT1G
Datasheet:

BC856ALT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

318-08
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for BC856ALT1G

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BC856ALT1G General Description

The BC856ALT1G transistor offers a maximum collector-emitter voltage (V(br)ceo) of -65V, making it suitable for a range of low-power electronic applications. With a transition frequency (ft) of 100MHz and a power dissipation of 225mW, this PNP transistor is designed to deliver reliable performance in a compact form factor. The DC current gain (hFE) of 125h ensures stable and efficient operation, while the SOT-23-3 package enhances its suitability for space-constrained designs

Key Features

Fully Compliant with AEC-Q101 and PPAP
RoHS Compliant and Halogen-Free
Suitable for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
High-Reliability Performance Ensured through AEC-Q101 Compliance
PPAP Capable and Qualified to Meet Customer Requirements
Automotive-Grade Qualification Meets High Standards

Specifications

Status	Active	Compliance	PbAHP
Case Outline	318-08	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Polarity	PNP	Type	General Purpose
VCE(sat) Max (V)	0.7	IC Cont. (A)	0.1
VCEO Min (V)	65	VCBO (V)	80
VEBO (V)	5	VBE(sat) (V)	0.7
VBE(on) (V)	0.6	hFE Min	125
hFE Max	250	fT Min (MHz)	100
PTM Max (W)	0.225	Pricing ($/Unit)	$0.0099Sample