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See Technical Specifications

BCP56-16T3G +BOM

1.0 A, 80 V NPN Bipolar Junction Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BCP56-16T3G
Datasheet:

BCP56-16T3G Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

1 A
Voltage - Collector Emitter Breakdown (Max):

80 V
Vce Saturation (Max) @ Ib, Ic:

500mV @ 50mA, 500mA
EDA/CAD Models:

Request Free CAD Models for BCP56-16T3G

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BCP56-16T3G General Description

Designers and engineers can confidently choose the BCP56-16T3G for their projects knowing that this transistor provides consistent and dependable performance across a wide range of operating conditions. Its ability to deliver high gain, low distortion, and reliable operation make it a valuable component for audio amplifier designs where quality and efficiency are paramount

Key Features

Automotive-qualified for harsh environments
Pull-up and pull-down functions available
Low current consumption, ICC ≤ 1μA
SMT package reduces board space
Robust construction for high reliability
High-reliability for data acquisition systems

Application

Introduction
Overview
Benefits

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V
Power - Max	1.5 W	Frequency - Transition	130MHz
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	BCP56