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See Technical Specifications

BCP56T1G +BOM

NPN Bipolar Junction Transistor, SOT-223 4-Pin package, 80V Vceo, 1A Ic, 1500mW power dissipation, Tape and Reel packaging

Manufacturer:

Onsemi
Mfr.Part #:

BCP56T1G
Datasheet:

BCP56T1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

0.0318
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for BCP56T1G

Email: [email protected]

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Tel: +852 95804164

BCP56T1G General Description

The BCP56T1G PNP Bipolar Transistor by ON Semiconductor is the go-to choice for high-speed switching applications in power management for portable devices, industrial equipment, and automotive systems. Its impressive specifications include a maximum collector current of 1A and a collector-emitter voltage of -80V, making it suitable for medium to high-power applications. Additionally, its low saturation voltage of 0.65V at 100mA collector current helps reduce power dissipation and enhance circuit efficiency. Designed with a SOT-223 package for optimal thermal performance and easy circuit board mounting, the BCP56T1G is well-equipped for space-constrained applications. With a DC current gain (hFE) ranging from 40 to 250 at 100mA collector current and a transition frequency (fT) of 250MHz, this transistor excels in high-speed switching applications

Key Features

High Current Capability
SOT-223 Package Design
Easy Soldering and Assembly

Application

Audio amplifier applications
High current capabilities

Specifications

Status	Active	Compliance	PbAHP
Case Outline	0.0318	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	1000	ON Target	N
Polarity	NPN	Type	General Purpose
VCE(sat) Max (V)	0.5	IC Cont. (A)	1
VCEO Min (V)	80	VCBO (V)	100
VEBO (V)	5	VBE(on) (V)	1
hFE Min	40	hFE Max	250
PTM Max (W)	1.5	Pricing ($/Unit)	$0.0817Sample