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See Technical Specifications

BCW66GLT1G +BOM

NPN Bipolar Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BCW66GLT1G
Datasheet:

BCW66GLT1G Datasheet (PDF)
Case Outline:

318-08
MSL Temp (°C):

260
Container Type:

REEL
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for BCW66GLT1G

Email: [email protected]

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Tel: +852 95804164

BCW66GLT1G General Description

Engineered for maximum performance, this transistor delivers reliable operation in a sleek and compact design. Its NPN configuration ensures seamless integration into circuits, providing superior conductivity for both linear and switching functions

Key Features

Fully Tested and Certified for High-Reliability Applications
Unique Site and Control Change Requirements; AEC-Q101 Qualified
PPAP Capable and Diverse Power Supply Options Available
Rugged Design for Harsh Environmental Conditions and 24/7 Operation

Compliant with Industry Standards Including IEC, UL, and CE
Fully Compliant with AEC-Q100 Qualification Process

Specifications

Status	Active	Case Outline	318-08
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	45 V	Collector- Base Voltage VCBO	75 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	700 mV
Maximum DC Collector Current	800 mA	Pd - Power Dissipation	225 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	BCW66
Continuous Collector Current	800 mA	Height	0.94 mm
Length	2.9 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Width	1.3 mm
Unit Weight	0.001376 oz