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See Technical Specifications

BD137G +BOM

1.5 A, 60 V NPN Power Bipolar Junction Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

BD137G
Datasheet:

BD137G Datasheet (PDF)
Case Outline:

77-09
MSL Temp (°C):

0
Container Type:

BLKBX
Mounting Style:

Through Hole
EDA/CAD Models:

Request Free CAD Models for BD137G

Email: [email protected]

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Tel: +852 95804164

BD137G General Description

Bipolar Transistor, Npn, 60V To-225; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:1.5A; Power Dissipation Pd:65W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-Rohs Compliant: Yes

Key Features

Peak Emitter Current - IEK = 200 @ TC = 150°C
Frequency Response Bandwidth - fB = 100 kHz @ RL = 1kΩ
This is a Pb-Free Device, RoHS Compliant
Collector-Emitter Saturation Voltage - VCEO(sat) = 2.5V @ Ic = 3A
Maximum Operating Temperature - TMAX = 150°C @ VCC = 40V
Data Sheet Revised for Improved Performance & Reliability

Specifications

Status	Active	Case Outline	77-09
MSL Temp (°C)	0	Container Type	BLKBX
Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	1.5 A	Pd - Power Dissipation	12.5 W
Gain Bandwidth Product fT	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	BD137
Continuous Collector Current	1.5 A	DC Collector/Base Gain hfe Min	25
Height	11.04 mm	Length	7.74 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	500
Subcategory	Transistors	Technology	Si
Width	2.66 mm	Unit Weight	0.016014 oz