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CGHV59070F-AMP +BOM

Wideband power amplifier module with high efficiency and reliability, suitable for microwave and millimeter-wave application

Manufacturer:

Macom
Mfr.Part #:

CGHV59070F-AMP
Datasheet:

CGHV59070F-AMP Datasheet (PDF)
Shipping Restrictions:

This product may require additional documentation to export from the United States.
Transistor Type:

HEMT
Technology:

GaN
Operating Frequency:

4.4 GHz to 5.9 GHz

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

- CGHV59070F HEMT 5.2GHz ~ 5.9GHz Evaluation Board

Product Category	RF JFET Transistors	Shipping Restrictions	This product may require additional documentation to export from the United States.
Transistor Type	HEMT	Technology	GaN
Operating Frequency	4.4 GHz to 5.9 GHz	Gain	14 dB
Transistor Polarity	N-Channel	Vds - Drain-Source Breakdown Voltage	150 V
Vgs - Gate-Source Breakdown Voltage	- 10 V, 2 V	Id - Continuous Drain Current	6.3 A
Output Power	70 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	57 W
Mounting Style	Flange Mount	Application	Radar
Product Type	RF JFET Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Vgs th - Gate-Source Threshold Voltage	- 2.8 V