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See Technical Specifications

DMMT5551-7-F +BOM

High Voltage Transistor (Matched hFE, VCE(sat) & VBE(sat)), 0.2A, 0.3W

Manufacturer:

Diodes Incorporated
Mfr.Part #:

DMMT5551-7-F
Datasheet:

DMMT5551-7-F Datasheet (PDF)
Transistor Type:

2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max):

200mA
Voltage - Collector Emitter Breakdown (Max):

160V
Vce Saturation (Max) @ Ib, Ic:

200mV @ 5mA, 50mA
EDA/CAD Models:

Request Free CAD Models for DMMT5551-7-F

DMMT5551-7-F General Description

Product DMMT5551-7-F is a transistor with matched NPN/NPN polarity, designed in a compact SOT26 case style with 6 pins. It features a collector-emitter voltage (V(br)ceo) of 160V and a power dissipation (Pd) of 300mW. With a DC collector current of 200mA and a DC current gain (hFE) of 80, this transistor operates within a wide temperature range from -55°C to +150°C

Key Features

Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Low Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6)

Application

SWITCHING

Specifications

Transistor Type	2 NPN (Dual) Matched Pair	Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Power - Max	300mW	Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	DMMT5551