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ECH8651R-TL-H +BOM

Description of ECH8651R-TL-H MOSFET, featuring N-channel design, 24V voltage, and 10A current handling capability

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ECH8651R-TL-H General Description

Mosfet Array 24V 10A 1.5W Surface Mount 8-ECH

Key Features

  • Low On-Resistance
  • 2.5V drive
  • Common-drain type dual MOSFET
  • Built-in proctetion diodes
  • Built-in gate protection resistors
  • Best suited for lithium battery (LiB) charging/discharging switching

Application

  • Power Management

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 24 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 14 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.3 V Qg - Gate Charge 16.8 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.4 W Channel Mode Enhancement
Series ECH8651R Configuration Dual
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Unit Weight 0.000686 oz

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