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EMB60T2R +BOM

Bipolar Transistors - Pre-Biased PNP+PNP Digital transistor (with built-in resistors)

  • Manufacturer:

    ROHM Semiconductor

  • Mfr.Part #:

    EMB60T2R

  • Datasheet:

    EMB60T2R Datasheet (PDF) pdf-icon

  • Transistor Type:

    2 PNP Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2kOhms

EMB60T2R General Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

ROHM Semiconductor Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased Series -
Transistor Type 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2kOhms
Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz Power - Max 150mW
Mounting Type Surface Mount Base Product Number EMB60
Product Category: Bipolar Transistors - Pre-Biased Configuration: Dual
Transistor Polarity: PNP Typical Input Resistor: 2.2 kOhms
Typical Resistor Ratio: 21 Mounting Style: SMD/SMT
Maximum Operating Frequency: 250 MHz Continuous Collector Current: 100 mA
Pd - Power Dissipation: 150 mW Maximum Operating Temperature: + 150 C
Packaging: Cut Tape Output Voltage: 150 mV
Product Type: BJTs - Bipolar Transistors - Pre-Biased Factory Pack Quantity: 8000
Subcategory: Transistors Part # Aliases: EMB60

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