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EMH4FHAT2R +BOM

Bipolar Transistors - BJT NPN+NPN Digital transistor (Corresponds to AEC-Q101)

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased	Series	Automotive, AEC-Q101
Transistor Type	2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	-	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA	Current - Collector Cutoff (Max)	500nA (ICBO)
Frequency - Transition	250MHz	Power - Max	150mW
Mounting Type	Surface Mount	Base Product Number	EMH4FHAT2
Product Category:	Bipolar Transistors - BJT	Mounting Style:	SMD/SMT
Transistor Polarity:	NPN	Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	50 V	Collector- Base Voltage VCBO:	50 V
Emitter- Base Voltage VEBO:	5 V	Collector-Emitter Saturation Voltage:	300 mV
Maximum DC Collector Current:	100 mA	Pd - Power Dissipation:	150 mW
Gain Bandwidth Product fT:	250 MHz	Minimum Operating Temperature:	-
Maximum Operating Temperature:	+ 150 C	Qualification:	AEC-Q101
Packaging:	MouseReel	Continuous Collector Current:	100 mA
DC Collector/Base Gain hfe Min:	100	DC Current Gain hFE Max:	600
Product Type:	BJTs - Bipolar Transistors	Factory Pack Quantity:	8000
Subcategory:	Transistors	Technology:	Si
Part # Aliases:	EMH4FHA