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EMF30N02J +BOM
Power Field-Effect Transistor, 5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
SOT-23-
Manufacturer:
NAXIMSEMI
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Mfr.Part #:
EMF30N02J
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Datasheet:
-
Part Life Cycle Code:
Contact Manufacturer
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ECCN Code:
EAR99
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
20 V
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EDA/CAD Models:
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Availability: 4115 PCS
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EMF30N02J General Description
Power Field-Effect Transistor, 5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Specifications
Part Life Cycle Code | Contact Manufacturer | Reach Compliance Code | |
ECCN Code | EAR99 | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 20 V | Drain Current-Max (ID) | 5 A |
Drain-source On Resistance-Max | 0.03 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Min | -55 °C | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 20 A | Surface Mount | YES |
Terminal Form | GULL WING | Terminal Position | DUAL |
Transistor Element Material | SILICON |
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In Stock: 4,115
Minimum Order: 1
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