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EMF20B02V +BOM

Power Field-Effect Transistor, 8.5A I(D), 20V, 0.02ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8

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EMF20B02V General Description

Power Field-Effect Transistor, 8.5A I(D), 20V, 0.02ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8

EMF20B02V

Specifications

Part Life Cycle Code Contact Manufacturer Reach Compliance Code
ECCN Code EAR99 Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 8.5 A Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code S-PDSO-F6
Number of Elements 2 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 34 A Surface Mount YES
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Element Material SILICON

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