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EPC2104 +BOM

Trans MOSFET N-CH GaN 100V 23A 75-Pin Die

EPC2104 General Description

Mosfet Array 100V 23A Surface Mount Die

Specifications

ECCN EAR99 Supplier Cage Code 6UTY1
Series eGaN® Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge) FET Feature -
Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 6.3mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Power - Max - Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number EPC210

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