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See Technical Specifications

FCP20N60 +BOM

Featuring SUPERFET® technology, the FCP20N60 is a robust N-Channel Power MOSFET optimized for easy driving applications

Manufacturer:

Onsemi
Mfr.Part #:

FCP20N60
Datasheet:

FCP20N60 Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FCP20N60

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FCP20N60 General Description

Introducing the FCP20N60 SuperFET® MOSFET by ON Semiconductor, a groundbreaking high voltage super-junction MOSFET that incorporates charge balance technology for exceptional performance. This advanced technology results in outstanding low on-resistance and reduced gate charge, setting a new standard for conduction loss minimization and superior switching characteristics. With impressive dv/dt rate and higher avalanche energy, the SuperFET MOSFET is the perfect solution for a wide range of switching power applications, including PFC, server/telecom power, FPD TV power, ATX power, and industrial power. Trust the reliability and efficiency of SuperFET MOSFET for your power needs

Key Features

800V @ T_j = 125°C
Typ. R_ds(on) = 200 mΩ
Low Gate Leakage (Typ. I_gs = 10 μA)
High Immunity to Electrostatic Discharge (Typ. V_c = 1 kV)
Typ. R_c = 300 Ω
Ultra Low Input Capacitance (Typ. C_i = 10 pF)

Application

Solar Inverter
AC-DC Power Supply

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	190 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	208 W	Channel Mode	Enhancement
Series	FCP20N60	Configuration	Single
Fall Time	65 ns	Forward Transconductance - Min	17 S
Height	16.3 mm	Length	10.67 mm
Product Type	MOSFET	Rise Time	140 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	230 ns	Typical Turn-On Delay Time	62 ns
Width	4.7 mm	Unit Weight	0.068784 oz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

Quality Guarantee

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

J**e 06/19/2024

The product corresponds to the description on the site. Very satisfied. Huge gratitude to the seller!

E**e 04/03/2021

Highly satisfied with the speedy delivery of my NTS0104GU12 components from Avaq. Received them in perfect condition within a few days, saving me both time and hassle.

T**y 11/06/2020

Two quiet in ukraine ukrpoy. All right. On the dress of buli viiavleni slidi glue, with grief and viivali. For experimentation and self-tapping.

B**n 09/13/2020

Kit came in fine, had extra LED's, nice project to practice soldering