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Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK
IPAKManufacturer:
Mfr.Part #:
FCU600N65S3R0
Datasheet:
Case Outline:
369AP
MSL Temp (°C):
0
Container Type:
TUBE
Technology:
Si
EDA/CAD Models:
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The FCU600N65S3R0 is a cutting-edge MOSFET from ON Semiconductor's SuperFET® III series, designed to deliver exceptional performance in high voltage applications. By incorporating charge balance technology, this MOSFET offers a remarkably low on-resistance and reduced gate charge, resulting in minimized conduction loss and improved switching capabilities. This innovative technology also enables the device to withstand extreme dv/dt rates, making it an ideal choice for demanding environments where reliability is paramount
Status | Active, Not Rec | Case Outline | 369AP |
MSL Temp (°C) | 0 | Container Type | TUBE |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 6 A | Rds On - Drain-Source Resistance | 600 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 11 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 54 W |
Channel Mode | Enhancement | Series | SuperFET3 |
Configuration | Single | Fall Time | 14 ns |
Forward Transconductance - Min | 3.6 S | Product Type | MOSFET |
Rise Time | 9 ns | Factory Pack Quantity | 75 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 29 ns |
Typical Turn-On Delay Time | 11 ns | Unit Weight | 0.012699 oz |
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