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FCU600N65S3R0 +BOM

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK

FCU600N65S3R0 General Description

The FCU600N65S3R0 is a cutting-edge MOSFET from ON Semiconductor's SuperFET® III series, designed to deliver exceptional performance in high voltage applications. By incorporating charge balance technology, this MOSFET offers a remarkably low on-resistance and reduced gate charge, resulting in minimized conduction loss and improved switching capabilities. This innovative technology also enables the device to withstand extreme dv/dt rates, making it an ideal choice for demanding environments where reliability is paramount

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Key Features

  • 700 V @ TJ= 150 oC
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
  • Ultra Low Gate Charge (Typ. Qg = 11 nC)
  • Optimized Capacitance
  • 100% Avalanche Tested
  • RoHS Compliant
  • Typ. RDS(on) = 493 mΩ
  • Internal Gate Resistance: 0.9 Ω
ON Semiconductor, LLC Original Stock

Application

  • Computing
  • Consummer
  • Industrial
ON Semiconductor, LLC Inventory

Specifications

Status Active, Not Rec Case Outline 369AP
MSL Temp (°C) 0 Container Type TUBE
Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 600 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 11 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 54 W
Channel Mode Enhancement Series SuperFET3
Configuration Single Fall Time 14 ns
Forward Transconductance - Min 3.6 S Product Type MOSFET
Rise Time 9 ns Factory Pack Quantity 75
Subcategory MOSFETs Typical Turn-Off Delay Time 29 ns
Typical Turn-On Delay Time 11 ns Unit Weight 0.012699 oz

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FCU600N65S3R0 Datasheet PDF

Preliminary Specification FCU600N65S3R0 PDF Download

FCU600N65S3R0 PDF Preview

In Stock: 5,502

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