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FDA24N40F +BOM

Advanced 400V N-Channel MOSFET design for high-reliability operations

FDA24N40F General Description

The FDA24N40F UniFET MOSFET is a cutting-edge high voltage MOSFET that incorporates advanced planar stripe and DMOS technology. With a focus on minimizing on-state resistance and enhancing switching performance, this MOSFET offers superior avalanche energy strength compared to traditional models. One key feature is the improved reverse recovery performance of the body diode, achieved through meticulous lifetime control. The UniFET FRFET MOSFET boasts a speedy t_rr of less than 100nsec and impressive reverse dv/dt immunity of 15V/ns, surpassing the performance of standard planar MOSFETs. In practical terms, this means a reduction in required components and enhanced system reliability, especially in applications where the MOSFET's body diode plays a crucial role

Key Features

  • Fast switching performance
  • High voltage rating (400V)
  • RDS(on) = 80mΩ @ ID = 12A

Application

  • Suitable for a range of purposes.
  • Adaptable to numerous uses.

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 400 V Id - Continuous Drain Current 23 A
Rds On - Drain-Source Resistance 190 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 60 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 235 W Channel Mode Enhancement
Tradename UniFET Series FDA24N40F
Configuration Single Fall Time 75 ns
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 92 ns
Factory Pack Quantity 450 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 120 ns
Typical Turn-On Delay Time 40 ns Width 5 mm
Unit Weight 0.162260 oz

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