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FDPF12N50NZ +BOM

Field-Effect Transistor (FET) with N-type channel

Manufacturer:

Onsemi
Mfr.Part #:

FDPF12N50NZ
Datasheet:

FDPF12N50NZ Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDPF12N50NZ

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FDPF12N50NZ General Description

With its advanced planar stripe and DMOS technology, this MOSFET delivers exceptional performance in terms of efficiency and reliability. Its compact design and high switching capabilities make it a valuable component in power electronics systems

Key Features

Elevated temperature tolerance
Low leakage current at high temperatures
Robustness against electrical overstress
Compact design for miniaturization

Application

Versatile solutions for modern living
Efficiency at its finest

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	11.5 A
Rds On - Drain-Source Resistance	460 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	5 V	Qg - Gate Charge	23 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	42 W	Channel Mode	Enhancement
Tradename	UniFET	Series	FDPF12N50NZ
Configuration	Single	Fall Time	45 ns
Forward Transconductance - Min	12 S	Height	16.07 mm
Length	10.36 mm	Product Type	MOSFET
Rise Time	50 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	60 ns	Typical Turn-On Delay Time	20 ns
Width	4.9 mm	Unit Weight	0.068784 oz