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N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ
D2PAKManufacturer:
Fairchild Semiconductor
Mfr.Part #:
FDB2710
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Models:
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With the FDB2710, users can expect unparalleled efficiency and reliability due to its optimized design that prioritizes both low resistance and high-speed switching. This combination of features ensures that the MOSFET delivers consistent and responsive performance, making it ideal for a wide range of applications
Source Content uid | FDB2710 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 35 Weeks |
Avalanche Energy Rating (Eas) | 145 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 250 V |
Drain Current-Max (ID) | 50 A | Drain-source On Resistance-Max | 0.0425 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-XSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 260 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Element Material | SILICON |
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