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Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
TO-263Manufacturer:
FAIRCHILD
Mfr.Part #:
FDB28N30
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
compliant
ECCN Code:
EAR99
Avalanche Energy Rating (Eas):
588 mJ
EDA/CAD Models:
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Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
Source Content uid | FDB28N30 | Part Life Cycle Code | Obsolete |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 588 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 300 V |
Drain Current-Max (ID) | 28 A | Drain-source On Resistance-Max | 0.129 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 112 A |
Surface Mount | YES | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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