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See Technical Specifications

FDB33N25 +BOM

MOSFET UF 250V 94MOHM D2PAK

Manufacturer:

FAIRCHILD
Mfr.Part #:

FDB33N25
Datasheet:

FDB33N25 Datasheet (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDB33N25

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FDB33N25 General Description

The FDB33N25, also known as UniFETTM MOSFET, is a high voltage MOSFET that boasts cutting-edge planar stripe and DMOS technology. This technology allows the MOSFET to maintain a remarkably low on-state resistance while delivering superior switching performance and increased avalanche energy strength. This makes the FDB33N25 the ideal choice for various switching power converter applications including power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts

Key Features

R_DS(on) = 94mΩ ( Max.)@ V_GS = 10V, I_D = 16.5A
Low gate charge ( Typ. 36.8nC)
Low C_rss ( Typ. 39pF)
100% avalanche tested

Application

This product is general usage and suitable for many different applications.

Specifications

Source Content uid	FDB33N25	Part Life Cycle Code	Transferred
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.29.00.95
Additional Feature	FAST SWITCHING	Avalanche Energy Rating (Eas)	918 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	250 V	Drain Current-Max (ID)	33 A
Drain-source On Resistance-Max	0.094 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	132 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON