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FDC6304P +BOM

Dual P-Channel Digital FET -25V, -0.46A, 1.1Ω

Manufacturer:

onsemi
Mfr.Part #:

FDC6304P
Datasheet:

FDC6304P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDC6304P

FDC6304P General Description

These P-Channel enhancement mode field effect transistor are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Key Features

-25 V, -0.46 A continuous, -1.0 A Peak
R_DS(ON) = 1.5 Ω @ V_GS= -2.7 V
R_DS(ON) = 1.1 Ω @ V_GS = -4.5 V
Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.5 V
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	460 mA	Rds On - Drain-Source Resistance	1.5 Ohms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	1.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	900 mW
Channel Mode	Enhancement	Series	FDC6304P
Configuration	Dual	Fall Time	8 ns
Forward Transconductance - Min	0.8 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	8 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 P-Channel	Typical Turn-Off Delay Time	55 ns
Typical Turn-On Delay Time	7 ns	Width	1.6 mm
Unit Weight	0.001270 oz