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FDC6401N +BOM

Power MOSFET FDC6401N - Dual N-Channel

Manufacturer:

ON SEMICONDUCTOR
Mfr.Part #:

FDC6401N
Datasheet:

FDC6401N Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDC6401N

FDC6401N General Description

When it comes to power management, the FDC6401N is a game-changer. Its advanced design ensures minimal power loss and superior performance in DC/DC converter applications. Whether you're using synchronous or conventional switching PWM controllers, this MOSFET is guaranteed to deliver exceptional results. Its low gate charge and fast switching speed make it a standout choice for efficiency-focused projects

Key Features

High current handling
Low RDS(ON)
High speed switching
Excellent surge capability

Application

Perfect for all your needs
Great for any project
Versatile and reliable

Specifications

Source Content uid	FDC6401N	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	48 Weeks
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (Abs) (ID)	3 A	Drain Current-Max (ID)	3 A
Drain-source On Resistance-Max	0.07 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.7 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON