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FDC699P +BOM

a 20v 0.022ohm power silicon

FDC699P General Description

Housed in a compact and thermally efficient PowerTrench package, the FDC699P delivers enhanced performance while ensuring easy installation on circuit boards. Its low on-resistance of 0.6 ohms and rapid switching speed further underline its suitability for demanding tasks. Furthermore, the FDC699P boasts a low gate charge and capacitance, effectively reducing switching losses and enhancing overall efficiency

Specifications

Series PowerTrench® FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 5 V Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2640 pF @ 10 V Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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