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FDD8874 +BOM

N-Channel PowerTrench® MOSFET 30V, 116A, 5.1mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDD8874
Datasheet:

FDD8874 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Avalanche Energy Rating (Eas):

240 mJ
EDA/CAD Models:

Request Free CAD Models for FDD8874

FDD8874 General Description

The FDD8874 N-Channel MOSFET stands out as a tailored solution for enhancing the efficiency of DC/DC converters, regardless of whether they employ synchronous or conventional switching PWM controllers. Its optimized characteristics, including low gate charge, low r_DS(ON), and fast switching speed, underscore its suitability for modern power electronics applications. By prioritizing these attributes, this MOSFET is well-equipped to play a pivotal role in elevating the performance and energy efficiency of the systems it is employed in

Key Features

Ultra-low noise operation
High-speed switching capability
R_DSON = 5.8 mΩ @ V_GS = 7V, I_D = 30A
Suitable for high-reliability applications
Low input capacitance
R_DSON = 6.2 mΩ @ V_GS = 9V, I_D = 40A

Application

A versatile product for you.

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code
Avalanche Energy Rating (Eas)	240 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	35 A	Drain-source On Resistance-Max	0.0064 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Qualification Status	COMMERCIAL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON