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See Technical Specifications

FDG6318PZ +BOM

Dual P-Channel Digital FET with -20V and -0.5A ratings, 780 mΩ resistance, packaged in a 3000-REEL

Manufacturer:

Onsemi
Mfr.Part #:

FDG6318PZ
Datasheet:

FDG6318PZ Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for FDG6318PZ

Email: [email protected]

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Tel: +852 95804164

FDG6318PZ General Description

The FDG6318PZ is a cutting-edge dual P-Channel logic level enhancement mode MOSFET meticulously engineered to minimize on-state resistance. Tailored for use in bipolar digital transistors and small signal MOSFETS, this product delivers unparalleled performance and reliability. Its advanced design makes it a superior choice for applications that demand precision and efficiency in electronic components

Key Features

Low power consumption < 1uA
High speed switching, 200V
ESD protected, 5000V HBM
Operating temperature -40 to 150°C
2.5V logic compatible
Fast turn-off time, 100ns

Application

A versatile and reliable choice.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	500 mA	Rds On - Drain-Source Resistance	780 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	1.62 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 mW
Channel Mode	Enhancement	Series	FDG6318PZ
Configuration	Dual	Fall Time	13 ns
Forward Transconductance - Min	1.1 S	Height	1.1 mm
Length	2 mm	Product	MOSFET Small Signal
Product Type	MOSFET	Rise Time	13 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 P-Channel	Type	FET
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	10 ns
Width	1.25 mm	Unit Weight	0.000988 oz