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See Technical Specifications

FDMA530PZ +BOM

P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

FDMA530PZ
Datasheet:

FDMA530PZ Datasheet (PDF)
Series:

PowerTrench®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for FDMA530PZ

FDMA530PZ General Description

The FDMA530PZ is a versatile and efficient device tailored for battery charge or load switching in cellular handsets and other ultraportable devices. It incorporates a MOSFET with low on-state resistance, ensuring optimal performance in power management applications. The unique MicroFET 2X2 package enhances thermal efficiency, making it ideal for linear mode operations where heat dissipation is crucial

Key Features

High-speed switching, typically 50ns
Low input capacitance, 1pF typ.
Excellent linearity and thermal performance
Suitable for high-frequency applications

Application

Perfect for any task.
Trusted by professionals.
A must-have for everyone.

Specifications

Series	PowerTrench®	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	35mOhm @ 6.8A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V	Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1070 pF @ 15 V	Power Dissipation (Max)	2.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount