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FDMC510P-F106 +BOM

MOSFET, Power MOSFET, 20V P-Channel, 8mΩ @ 4.5V, 50A, MLP 3.3x3.3

FDMC510P-F106 General Description

MOSFET, Power MOSFET, 20V P-Channel, 8mΩ @ 4.5V, 50A, MLP 3.3x3.3

Key Features

  • Ultra Low RDS(on)
  • Terminal Lead-Free and Halide Free

Application

  • Battery Management
  • Load Switch

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 6.4 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 116 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 41 W
Channel Mode Enhancement Series FDMC510P
Configuration Single Fall Time 170 ns
Forward Transconductance - Min 75 S Product Type MOSFET
Rise Time 34 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 338 ns Typical Turn-On Delay Time 15 ns
Part # Aliases FDMC510P_F106 Unit Weight 0.010582 oz

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